Theoretical study of Ge implanted silicon subjected to pulsed excimer (XeCl) laser radiation

Crystal Research and Technology

Volumn 31, Issue 7, 1996, Pages 847-850

  Klinger, D ^a   Auleytner, J ^a   Zymierska, D ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL CRYSTALLIZATION; MACROSCOPIC DIFFUSION EQUATION; MELTING DYNAMICS; PULSED EXCIMER LASER RADIATION;

ANNEALING; CALCULATIONS; COMPUTER SIMULATION; CRYSTALLIZATION; EXCIMER LASERS; ION IMPLANTATION; LASER BEAM EFFECTS; MELTING; PULSED LASER APPLICATIONS; RADIATION EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM;

SEMICONDUCTING SILICON;

EID: 0030391911     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.2170310705     Document Type: Article

References (8)

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