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Applied Physics Letters
Volumn 58, Issue 7, 1991, Pages 732-734
Effects of low-dose Si implantation damage on diffusion of phosphorus and arsenic in Si
(2)
Park, Heemyong
a
Law, Mark E
a
a
UNIVERSITY OF FLORIDA
(
United States
)
Author keywords
[No Author keywords available]
Indexed keywords
EID
:
21544457823
PISSN
:
00036951
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1063/1.104530
Document Type
:
Article
Times cited : (
24
)
References (
18
)
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