Study of extended defect structure induced by pulsed laser annealing in implanted silicon crystals

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 389-394

  Klinger, D ^a   Lefeld Sosnowska, M ^b   Zymierska, D ^a   Auleytner, J ^a   Kozankiewicz, B ^a   Reginski K ^c  

^a INSTITUTE OF PHYSICS   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; EXCIMER LASERS; ION IMPLANTATION; LASER BEAM EFFECTS; MICROSCOPIC EXAMINATION; PULSED LASER APPLICATIONS; SEMICONDUCTING GERMANIUM; SINGLE CRYSTALS;

INTERFERENCE POLARIZING MICROSCOPY; LANG X RAY TRANSMISSION TOPOGRAPHY; PULSED LASER ANNEALING;

SEMICONDUCTING SILICON;

EID: 0032738590     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199901)171:1<389::AID-PSSA389>3.0.CO;2-Z     Document Type: Article

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