Theoretical study of recrystallization process of amorphous Ge layer subjected to pulsed excimer (XeCl) laser radiation

Crystal Research and Technology

Volumn 32, Issue 7, 1997, Pages 983-987

  Klinger, D ^a   Auleytner, J ^a   Zymierska, D ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER APPLICATIONS; CRYSTALLIZATION; EXCIMER LASERS; FOURIER TRANSFORMS; GERMANIUM; HEATING; LASER PULSES; MELTING; METALLIC FILMS; PULSED LASER APPLICATIONS; THIN FILMS;

FOURIER EQUATION;

AMORPHOUS FILMS;

EID: 0031379832     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.2170320712     Document Type: Article

References (10)

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7. SEMICONDUCTORS & SEMIMETALS: V23: Pulsed Laser Processing of Semiconductors eds. Wood, R. F., White, C. W. Academic Press, Inc. 1984
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10. ZEIGER, H. J., FAN, J. C. C., PALM, B. J., GALE, R. P., CHAPMAN, R. L.: Laser and Electron Beam Processing of Materials Part IV: Annealing and Recrystallization Academic Press 1980