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Volumn 74, Issue 8, 1999, Pages 1141-1143

Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

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EID: 0000740603     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123468     Document Type: Article
Times cited : (18)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.