Extended defect structure induced by pulsed laser annealing in Ge implanted Si crystal

Journal of Alloys and Compounds

Volumn 328, Issue 1-2, 2001, Pages 242-247

  Klinger, D ^a   Lefeld Sosnowska, M ^a   Auleytner, J ^a   Zymierska, D ^a   Nowicki, L ^a   Stonert, A ^a   Kwiatkowski, S ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

Defect structure; Laser beam annealing; Structure and epitaxy; Thin films growth; X ray diffraction

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL LATTICES; DEFORMATION; EPITAXIAL GROWTH; EXCIMER LASERS; GERMANIUM; ION IMPLANTATION; PULSED LASER APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SUBSTRATES; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

PULSED LASER ANNEALING;

SINGLE CRYSTALS;

EID: 0035807506     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(01)01302-0     Document Type: Article

References (5)