Direct evidence for defect conduction at interface between gallium nitride and sapphire

Electronics Letters

Volumn 36, Issue 14, 2000, Pages 1237-1239

  Ansell, B J ^a   Harrison, L ^a   Foxon, C T ^a   Harris, J J ^b   Cheng, T S ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL DEFECTS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SAPPHIRE;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033719579     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000902     Document Type: Article

References (6)

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2. LOOK, D.C., and MOLNAR, R.: 'Degenerate layer at GaN/sapphire interface: influence on Hall-effect measurements', Appl. Phys. Lett., 1997, 70, (25), pp. 3377-3379
3. MOLNAR, R., LEI, T., and MOUSTAKAS, T.D.: 'Electron transport mechanism in gallium nitride', Appl. Phys. Lett., 1993, 62, (1), pp. 72-74
4. HARRIS, J.J., LEE, K.J., HARRISON, I., FLANNERY, L.B., KORAKAKIS, D., CHENG, T., FOXON, C.T., BOUGRIOUA, Z., MOERMAN, I., VAN DER STRICHT, W., THRUSH, E.J., HAMILTON, B., and FERHAH, K.: 'Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD', Phys. Stat. Sol., 1999, A176, (1), pp. 363-367
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6. LOOK, D.C.: 'Electrical characterisations of GaAs materials and devices' (Wiley, New York, 1989), Appendix B