Evaluation of tetrakis(diethylamino)hafnium precursor in the formation of hafnium oxide films using atomic layer deposition

Materials Research Society Symposium - Proceedings

Volumn 765, Issue , 2003, Pages 103-108

  Inman, Ronald ^a   Deshpande, Anand ^a,b   Jursich, Gregory ^a  

^a Chicago Research Center Inc   (United States)

^b 1120 Science and Engineering Offices   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DECOMPOSITION; DEPOSITION; DIELECTRIC MATERIALS; SILICON WAFERS; STOICHIOMETRY; TEMPERATURE; X RAY ANALYSIS;

ATOMIC LAYER DEPOSITION; HAFNIUM CHLORIDE; HAFNIUM OXIDE; TETRAKIS DIETHYLAMINO HAFNIUM;

HAFNIUM COMPOUNDS;

EID: 0242493065     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-765-d3.10     Document Type: Conference Paper

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