Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

Materials Research Society Symposium - Proceedings

Volumn 716, Issue , 2002, Pages 127-132

  Gutowski, Maciej ^a,b   Jaffe, John E ^a   Liu, Chun Li ^c   Stoker, Matt ^c   Hegde, Rama I ^d   Rai, Raghaw S ^d   Tobin, Philip J ^d  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF GDA SK   (Poland)

^c MOTOROLA INC   (United States)

^d MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); OXIDES; POLYSILICON; SILICA; SILICATES; SILICON; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY; ZIRCONIA;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROGRAPHS; HIGH PERMITTIVITY DIELECTRIC METAL OXIDES; SILICIDES; X RAY PHOTOEMISSION SPECTRA;

DIELECTRIC MATERIALS;

EID: 0036950581     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-716-b3.2     Document Type: Conference Paper

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