Etching of Si, SiO2, and Si3N4 in fluorocarbon discharges interpretation based on a Langmuir surface kinetics model

Journal of the Electrochemical Society

Volumn 150, Issue 11, 2003, Pages

  Kim, Min Tae ^a  

^a Korea Electric Power Research Institute (KEPRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FLUOROCARBONS; INDUCTIVELY COUPLED PLASMA; MATHEMATICAL MODELS; REACTION KINETICS; SILICA; SILICON; SILICON NITRIDE; SURFACES;

FLUOROCARBON DISCHARGES; LANGMUIR SURFACE KINETICS MODEL; PLASMA CHEMISTRY;

ETCHING;

EID: 0242425785     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1611496     Document Type: Article

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