Difference between C4F8 and C5F8 plasmas in surface reaction processes for selective etching of SiO2 over Si3N4

Thin Solid Films

Volumn 374, Issue 2, 2000, Pages 243-248

  Motomura, Hideki ^a   Imai, Shin Ichi ^b   Tachibana, Kunihide ^a  

^a KYOTO UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; FLUOROCARBONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MASS SPECTROMETRY; PLASMA ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

ELECTRON ATTACHMENT MASS SPECTROMETRY; SELECTIVE ETCHING;

SEMICONDUCTING FILMS;

EID: 0034292237     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01157-3     Document Type: Article

References (12)

1. Schaepkens M., Standaert T.E.F.M., Rueger N.R., Sebel P.G.M., Oehrlein G.S. J. Vac. Sci. Technol. A. 17:1999;26.
2. Tachibana K., Shirafuji T., Muraishi S. Jpn. J. Appl. Phys. 35:1996;3652.
3. Kroesen G.M.W., Lee H.H., Moriguchi H., Motomura H., Shirafuji T., Tachibana K. J. Vac. Sci. Technol. A. 15:1998;209.
4. Lee H.J., Motomura H., Tachibana K. Jpn. J. Appl. Phys. 37:1998;712.
5. Y. Yamada, S. Sasabe, Third Annual International ESH Conference, Montrey, California, (1996) Session 6.4.
6. Y. Yoshida, Forth Annual International ESH Conference, Milano, (1997) Session 7.3.
7. S. Karechi, L. Pruette, R. Reif, SEMICON Southwest '97 (1997) 1.
8. Stoffels E., Stoffels W.W., Tachibana K. Rev. Sci. Instrum. 69:1998;116.
9. Stoffels W.W., Stoffels E., Tachibana K. J. Vac. Sci. Technol. A. 16:1998;87.
10. Imai S., Tachibana K. Jpn. J. Appl. Phys. 38:1999;L888.
11. Cunge G., Booth J.P. J. Appl. Phys. 85:1999;3952.
12. Imai S., Jiwari N., Harada T., Nikoh H. Trans. Inst. Electron. Info. Commun. Eng. J81-C-II:1998;899. in Japanese.