Symmetric rate model for fluorocarbon plasma etching of SiO2

Applied Physics Letters

Volumn 68, Issue 12, 1996, Pages 1619-1621

  Ding, Ji ^a   Hershkowitz, Noah ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001400663     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115670     Document Type: Article

References (16)

1. R. J. Schutz, in VLSI Technology, 2nd ed., edited by S. M. Sze (McGraw-Hill, New York, 1988), p. 184.
2. E. Kay, J. W. Coburn, and A. Dilks, in Topics in Current Chemistry, edited by S. Veprek and M. Venugopala (Springer, New York, 1980), p. 1.
3. R. A. Barker, T. M. Mayer, and W. C. Pearson, J. Vac. Sci. Technol. B 1, 37 (1983).
4. D. C. Gray, I. Tepermeister, and H. H. Sawin, J. Vac. Sci. Technol. B 11, 1243 (1993).
5. T. M. Mayer and R. A. Barker, J. Vac. Sci. Technol. 21, 757 (1982).
6. R. A. Gottscho, C. W. Jurgensen, and D. J. Vitkavage, J. Vac. Sci. Technol. B 10, 2133 (1992).
7. E. Zawaideh and N. S. Kim, J. Appl. Phys. 62, 2498 (1987).
8. P. Hoffmann and F. Heinrich, in Proceedings of the 9th International Symposium on Plasma Chemistry (Pugnochiuo, Italy, 1989), p. 1003.
9. F. Fracassi, E. Occhielo, and J. W. Coburn, J. Appl. Phys. 62, 3980 (1987).
10. J. Ding, J.-S. Jenq, G.-H. Kim, H. L. Maynard, J. S. Hamers, N. Hershkowitz, and J. W. Taylor, J. Vac. Sci. Technol. A 11, 1283 (1993).
11. N. Mutsukura, S.-I. Inoue, and Y. Machi, J. Appl. Phys. 72, 43 (1992).
12. W. D. Partlow, R. E. Witkowski, R. M. Young, R. Fedder, and F. Hagedron, SPIE Proc. 1325, 258 (1990).
13. J. W. Zou, K. Reichdelt, K. Schmidt, and B. Dischlet, J. Appl. Phys. 65, 3914 (1989).
14. J. W. Zou, K. Schmidt, K. Reichdelt, and B. Dischlet, J. Appl. Phys. 67, 487 (1990).
15. J.-S. Jenq, J. Ding, J. W. Taylor, and N. Hershkowitz, Plasma Sources Sci. Technol. 3, 154 (1994).
16. R. L. McClain, Ph.D. thesis, University of Wisconsin-Madison, 1991 (unpublished).