Photoresist selectivity mechanism in SiO2 etching by inductively coupled plasma using fluorocarbon gases

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1482-1488

  Imai, Shin Ichi ^a   Motomura, Hideki ^b   Tachibana, Kunihide ^b  

^a PANASONIC CORPORATION   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRON RESONANCE; ELLIPSOMETRY; FLUORINE COMPOUNDS; GROUND STATE; INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETRY; MOLECULAR STRUCTURE; PHOTORESISTS; SEMICONDUCTING FILMS; SILICA; THICKNESS MEASUREMENT;

DISSOCIATIVE RESONANCE ELECTRON CAPTURE; ELECTRON ATTACHMENT MASS SPECTROSCOPY; FLUOROCARBON GAS; NONDISSOCIATIVE RESONANCE ELECTRON CAPTURE; PHOTORESIST ETCH RATE; QUADRUPOLE MASS SPECTROMETER;

PLASMA ETCHING;

EID: 0035982575     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1495503     Document Type: Conference Paper

References (15)