Mechanism of high density plasma processes for ion-driven etching of materials

Solid-State Electronics

Volumn 43, Issue 9, 1999, Pages 1769-1775

  Lee, J W ^a   Donohue, J F ^a   Mackenzie, K D ^a   Westerman, R ^a   Johnson, D ^a   Pearton, S J ^b  

^a Qualtx Technology Inc   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH (CHEMICAL); ION BOMBARDMENT; MATHEMATICAL MODELS; SILICA;

INDUCTIVELY COUPLED PLASMA (ICP) REACTORS; ION DRIVEN ETCHING;

PLASMA ETCHING;

EID: 0033185195     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00129-X     Document Type: Article

References (16)

1. Oehrlein G.S. Surf Sci. 386:1997;222.
2. Asmussen J. Jr, Grotjohn T.A., Mak P.V., Perrin M.A. IEEE Trans Plasma Sci. 25:1997;1196.
3. Lee J.T.C. Solid State Technol. 39:1996;63.
4. Popov O.A. High density plasma sources. 1995;Noyes, Park Ridge, NJ.
5. Lieberman M.A., Gottscho R.A. Francombe M.H., Vossen J.L., Physics of films. 1994;Academic Press, NY.
6. Graves D.B., Wu H., Porteous R.K. Jpn J Appl Phys. 32:1993;2999.
7. Stevens J.E., Huang Y.C., Jarecki R.L., Cecchi J.L. J Vac Sci Technol A. 10:1992;1270.
8. Cook J.M., Ibbotson D.E., Foo P.D., Flamm D.L. J Vac Sci Technol A. 8:1990;1820.
9. Winters H.F., Coburn J.W. Surf Sci Rep. 14:1992;161.
10. Bell F.H., Joubert O. J Vac Sci Technol B. 15:1997;88.
11. Campbell G.A., de Chambier A., Mendoza F., Parker N.W., Pearson D.I.C., Tokunaga K., Tsukada T., Mashiro S., Nogami H. Proc SPIE. 1803:1992;226.
12. Chen F.F., Chevallier G. J Vac Sci Technol A. 10:1992;1389.
13. Lam S.W., Hershowitz N. Plasma Sources Sci Technol. 2:1994;40.
14. Perry A.G., Vender and D., Boswell R.W. J Vac Sci Technol B. 9:1991;310.
15. Hopwood J. Plasma Sources Sci Technol. 1:1992;109.
16. Foster JC, Keller JH. In: O.A. Popov. High density plasma sources. Park Ridge, NJ: Noyes, 1995.