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Volumn 279, Issue 1, 1998, Pages 60-65
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A plasma kinetics model: Analysis of wall loss reactions in dry etching of silicon dioxide
a a a
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HITACHI LTD
(Japan)
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Author keywords
Composition; Plasma chemistry; Surface reaction
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Indexed keywords
ADSORPTION;
DISSOCIATION;
MATHEMATICAL MODELS;
PLASMA DENSITY;
PLASMA ETCHING;
REACTION KINETICS;
SURFACE PHENOMENA;
SURFACE STRUCTURE;
PLASMA CHEMISTRY;
STICKING COEFFICIENT;
SILICA;
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EID: 0032483285
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-8388(98)00612-4 Document Type: Article |
Times cited : (10)
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References (13)
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