Silicon carbide MESFETs performances and application in broadcast power amplifiers

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 641-644

  Temcamani, F ^a   Pouvil, P ^a   Noblanc, O ^b   Brylinski, C ^b   Bannelier, P ^c   Darges, B ^c   Prigent, J P ^c  

^a ENSEA   (France)

^b THALES   (France)

^c THOMCAST   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; DIGITAL TELEVISION; MICROWAVE AMPLIFIERS; MOSFET DEVICES; POWER AMPLIFIERS; RADIO FREQUENCY AMPLIFIERS; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SILICON CARBIDE; TELEVISION BROADCASTING;

DIRECT CURRENT MEASUREMENT; DRAIN SATURATION CURRENT; OSCILLATION FREQUENCY; POWER GAIN; SMALL SIGNAL ANALYSIS;

MESFET DEVICES;

EID: 0035683230     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.966976     Document Type: Article

References (7)

1. Recent application of silicon carbide to high power microwave
2. Progress in high power SiC microwave MESFETs
3. Power density comparison between microwave power MESFET's processed on conductive and semi-insulating wafer
4. Diamond and related materials
5. Power amplification with silicon carbide MESFET
6. Power characteristics of high voltage LDMOS transistors