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Volumn 1, Issue , 1997, Pages 45-48
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Operation of microwave power amplifiers fabricated from wide bandgap semiconductors
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Author keywords
[No Author keywords available]
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Indexed keywords
ENERGY GAP;
GATES (TRANSISTOR);
MESFET DEVICES;
MICROWAVE AMPLIFIERS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON CARBIDE;
GALLIUM NITRIDE;
POWER ADDED EFFICIENCY;
WIDE BAND GAP SEMICONDUCTORS;
POWER AMPLIFIERS;
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EID: 0030655224
PISSN: 0149645X
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (5)
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References (17)
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