Influence of gate finger width on RF characteristics of 4H-SiC MESFET

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1379-1382

  Arai, Manabu ^a   Honda, Hirotake ^a   Ogata, Makoto ^a   Sawazaki, Hiroshi ^a   Ono, Shuichi ^a  

^a JAPAN RADIO CO LTD   (Japan)

Author keywords

Gate finger width; Load pull; MESFETs; Output power; Output power density

Indexed keywords

CAPACITANCE; SILICON CARBIDE; SILICON WAFERS; ELECTRIC BREAKDOWN; FREQUENCIES; THERMAL CONDUCTIVITY;

GATE FINGERS; LOAD PULL; MESFETS; OUTPUT POWER; OUTPUT POWER DENSITY; GATE FINGER WIDTH;

MESFET DEVICES;

EID: 0036433847     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1379     Document Type: Conference Paper

References (7)

1. A.T. Allen, R. A. Sadler, T. S. Alcorn, J. Sumakeris, R. C. Glass, H. H. Carter Jr. and J. W. Palmour: Mater et al.: Mater. Sci. Forum Vols. 264-268 (1998), p. 953.
2. J. W. Palmour, E. T. Allen, S. T. Sheppard, W. L Pribble, R. A. Sadler, T. S. Alcorn, Z. Ring and C. H. Carter Jr.: 57 th Annual Device Research Conference (1998), p. 38.
3. M. Arai, M. Ogata, H. Honda, H. Sawazaki, A. Nakagawa and M. Kitamura: Mater. Sci. Forum Vols. 353-356 (2001), p. 711.
4. S. S. Sriam, G. Augustine, A. A. Burk Jr., R. C. Glass, H. M. Hobgood, P.A. Orphanos, L. B. Rowland, C. D. Brandt, M. C. Driver and R. H. Hopkins: IEEE Electron Device lett. vol. 17 (1996), p. 160.
5. N. Rorsman, J. Eriksson and H. Zirath: Mater. Sci. Forum Vols. 338-342 (2000), p. 1259.
6. G. Dambrine, A Cappy, F. Heliodore and E. Playez: IEEE Trans. MTT vol. 36 (1988), p. 1151.
7. L. Yang, and S. I. Long: IEEE Electron Device lett. vol. 7 (1986), p. 75.