Observations of deep levels in 4H-SiC using optoelectronic modulation spectroscopy

Journal of Electronic Materials

Volumn 30, Issue 10, 2001, Pages 1361-1368

  Chiu, Chi Hsin ^a   Parmiter, P J M ^b   Hilton, K ^b   Uren, M J ^b   Swanson, J G ^a  

^a KING'S COLLEGE LONDON   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

4H SiC; Defects; Delocalized trap; Electron trap; Hole trap; MESFET; OEMS; Optical; Semiconductor

Indexed keywords

DEFECTS; ELECTRON TRAPS; HOLE TRAPS; LIGHT MODULATION; OPTOELECTRONIC DEVICES;

OPTICAL ADMITTANCE SPECTROSCOPY (OAS); OPTOELECTRONIC MODULATION SPECTROSCOPY (OEMS);

SILICON CARBIDE;

EID: 0035484432     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0125-9     Document Type: Article

References (14)