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Volumn 640, Issue , 2001, Pages
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Short-channel effect suppression in silicon carbide power MESFETs
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Author keywords
[No Author keywords available]
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Indexed keywords
BIPOLAR TRANSISTORS;
COMPOSITE MATERIALS;
SEMICONDUCTOR DOPING;
SILICON CARBIDE;
PARASITIC BIPOLAR TRANSISTOR;
SHORT CHANNEL EFFECT SUPPRESSION;
SILICON CARBIDE POWER MESFETS;
MESFET DEVICES;
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EID: 0034866328
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (6)
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