Semiconductor thickness and back-gate voltage effects on the gate tunnel current in the MOS/SOI system with an ultrathin oxide

IEEE Transactions on Electron Devices

Volumn 47, Issue 12, 2000, Pages 2347-2351

  Majkusiak, Bogdan ^a   Badri, Mohamed H ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Modeling; Mos devices; Soi technology; Tunnel diodes; Tunneling

Indexed keywords

EID: 0004860345     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887019     Document Type: Article

References (8)

1. B. Majkusiak, "Gate tunnel current in an MOS transistor," IEEE Trans. Electron Devices, vol. 37, pp. 1087-1092, 1990.
2. M. A. Green, F. D. King, and J. Shewchun, "Minority carrier MIS tunnel diodes and their application to electron- and photovoltaic energy conversion-I: Theory," Solid-State Electron., vol. 17, pp. 551-561, 1974.
3. M. A. Green and J. Shewchun, "Current multiplication in metal-insulator-semiconductor (MIS) tunnel diodes," Solid-State Electron., vol. 17, pp. 349-365, 1974.
4. B. Majkusiak and A. Strojwas, "Influence of oxide thickness nonuniformities on the tunnel current-voltage and capacitance-voltage characteristics of the metal-oxide-semiconductor system," J. Appl. Phys., vol. 74, pp. 5638-5647, 1993.
5. M. Badri and B. Majkusiak, "Theory of the MOS/SOI tunnel diode," Microelectron. Eng., vol. 48, pp. 375-378, 1999.
6. J. Shewchun and R. A. Clarke, "The surface oxide transistor (SOT)," Solid-State Electron., vol. 16, pp. 213-219, 1973.
7. J. Ruzyllo, "Lateral MIS tunnel transistor," IEEE Electron Device Lett., vol. EDL-1, pp. 197-199, Oct. 1980.
8. B. Majkusiak, "Experimental and theoretical study of the current-voltage characteristics of the MISIM tunnel transistor," IEEE Trans. Electron Devices, vol. 45, pp. 1903-1911, Sept. 1998.