Effects of gate-to-body tunneling current on pass-transistor based PD/SOI CMOS circuits

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 121-122

  Chuang, C T ^a   Puri, R ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; SWITCHING;

TUNNELING CURRENTS;

CMOS INTEGRATED CIRCUITS;

EID: 0036458721     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2002.1044444     Document Type: Conference Paper

References (5)

1. W.C. Lee and C. Hu, Dig. Tech. Papers, Symp. VLSI Technology, 2000, pp. 198-199.
2. S.K.H. Fung et al., Proc. IEEE Int'l SOI Conf., 2000, pp. 122-123.
3. S.K.H. Fung et al., IEDM Tech. Dig., 2000, pp. 231-234.
4. C.T. Chuang, R. Puri, and K. Bernstein, Extended Abstracts, 2001 International Conf. on Solid State Devices and Materials, Tokyo, Japan, Sept. 26-28, 2001, pp. 262-263.
5. R. Puri et al., IEEE J. Solid-State Circuits, vol. 36, no. 2, Feb. 2001, pp. 290-298.