Effects of gate-to-body tunneling current on PD/SOI CMOS SRAM

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 75-76

  Joshi, R V ^a   Chuang, C T ^a   Fung, S K H ^a   Assaderaghi, F ^a   Sherony, M ^a   Yang, I ^a   Shahidi, G ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TUNNELING; LEAKAGE CURRENTS; SILICON ON INSULATOR TECHNOLOGY; STATIC RANDOM ACCESS STORAGE; SUBSTRATES;

GATE TUNNELING CURRENTS;

GATES (TRANSISTOR);

EID: 0034795708     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)