Temperature effect on ultrathin SiO2 time-dependent-dielectric-breakdown

Applied Physics Letters

Volumn 83, Issue 12, 2003, Pages 2399-2401

  Cheung, Kin P ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CURRENTS; ELECTRON TRAPS; HIGH TEMPERATURE EFFECTS; PHOTODEGRADATION; REACTION KINETICS; SILICA;

DIELECTRIC BREAKDOWN;

ULTRATHIN FILMS;

EID: 0142121667     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1613367     Document Type: Article

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