Unifying the thermal-chemical and anode-hole-injection gate-oxide breakdown models

Microelectronics Reliability

Volumn 41, Issue 2, 2001, Pages 193-199

  Cheung, Kin P ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TRANSITIONS; HOLE TRAPS; REACTION KINETICS; SEMICONDUCTOR DEVICE MODELS;

ANODE-HOLE-INJECTION MODELS; THERMAL-CHEMICAL (TC) MODELS;

MICROELECTRONICS;

EID: 0035129983     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00203-1     Document Type: Article

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