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Solid-State Electronics

Volumn 46, Issue 3, 2002, Pages 321-328

Ultra-thin gate oxide reliability projections

(14) Weir, B E a Alam, M A a Silverman, P J a Baumann, F a Monroe, D a Bude, J D a Timp, G L a Hamad, A b Ma, Y b Brown, M M b Hwang, D b Sorsch, T W a Ghetti, A a Wilk, G D a

a LUCENT TECHNOLOGIES (United States)

b NOKIA RESEARCH CENTER (United States)

Author keywords

Gate oxide; Reliability; TDDB; Ultra thin

Indexed keywords

ELECTRIC BREAKDOWN; FAILURE ANALYSIS; LEAKAGE CURRENTS; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; SILICA; ULTRATHIN FILMS;

GATE OXIDES;

GATES (TRANSISTOR);

EID: 0036498154 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00103-4 Document Type: Article

Times cited : (13)

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