On the mechanism of electron trap generation in gate oxides

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 89-94

  Zhang, W D ^a   Zhang, J F ^a   Lalor, M ^a   Burton, D ^a   Groeseneken, G ^b   Degraeve, R ^b  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

Breakdown; CMOS; Defects; Reliability; Silicon dioxides; Traps

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEFECTS; ELECTRIC BREAKDOWN; SILICA;

GATE OXIDES;

ELECTRON TRAPS;

EID: 0035498633     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00652-9     Document Type: Conference Paper

References (13)