Monitoring Oxide Quality Using the Spread of the dC/dV Peak in Scanning Capacitance Microscopy Measurements

IEEE Electron Device Letters

Volumn 24, Issue 10, 2003, Pages 667-670

  Chim, W K ^a   Wong, K M ^a   Yeow, Y T ^b   Hong, Y D ^b   Lei, Y ^a   Teo, L W ^a   Choi, W K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

Interface trap; Oxide quality; Scanning capacitance microscopy (SCM); Semiconductor dopant extraction

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING;

INTERFACE TRAPS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0141918442     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.817390     Document Type: Article

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