Evaluation of different oxidation methods for silicon for scanning capacitance microscopy

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 81-84

  Bowallius, O ^a   Anand, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION; OXIDATION; SEMICONDUCTOR DOPING; SUBSTRATES;

FLAT-BAND VOLTAGES; SCANNING CAPACITANCE MICROSCOPY (SCM);

SEMICONDUCTING SILICON;

EID: 0035246929     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00170-0     Document Type: Article

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