SiO2/Si system studied by scanning capacitance microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. B, 1996, Pages 3793-3797

  Yamamoto, Takuma ^a   Suzuki, Yoshihiko ^a   Sugimura, Hiroyuki ^a   Nakagiri, Nobuyuki ^a  

^a NIKON CORPORATION   (Japan)

Author keywords

AFM; Capacitance; MOS; SCaM; Scanning capacitance microscopy; Si; Silicon dioxide; SiO2; Thickness

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CHARACTERIZATION; ELECTRIC VARIABLES MEASUREMENT; MOS DEVICES; SEMICONDUCTING SILICON; SILICA;

BIAS DEPENDENCE; BIAS VOLTAGE; IMAGE CONTRASTS; LINE SHAPED GROOVES ETCHED; SCANNING CAPACITANCE MICROSCOPY; THERMAL OXIDE; THICKNESS;

MICROSCOPIC EXAMINATION;

EID: 0030165271     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3793     Document Type: Article

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