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Volumn 716, Issue , 2002, Pages 569-574

Characteristics of low-k and ultralow-k PECVD deposited SiCOH films

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ANNEALING; ATOMIC FORCE MICROSCOPY; COMPOSITION; ORGANIC COMPOUNDS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROSITY; REDUCTION; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0036945513     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-716-b12.3     Document Type: Conference Paper
Times cited : (11)

References (10)
  • 1
    • 0012538024 scopus 로고    scopus 로고
    • 2001 International Technology Roadmap for Semiconductors, Interconnects
    • 2001 International Technology Roadmap for Semiconductors, Interconnects.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.