Growth and in situ analysis of InAs/InP quantum dot stack and its far infrared absorption properties

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4999, Issue , 2003, Pages 229-237

  Hwang, Heedon ^a   Park, Kwangmin ^a   Yoon, Sukho ^a   Yoon, Euijoon ^a   Cheong, Hyeonsik M ^b   Dong Kim, Young ^c  

^a Seoul National University   (South Korea)

^b Sogang University   (South Korea)

^c Kyung Hee University   (South Korea)

Author keywords

Absorption; FTIR; InAs; InP; Quantum dots; Raman; Spectral reflectance; Surface photoabsorption; VSQD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED DETECTORS; RAMAN SCATTERING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

SURFACE PHOTOABSORPTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0141455286     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.482480     Document Type: Conference Paper

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