In situ observation of ellipsometry monolayer oscillations of metalorganic vapor-phase epitaxy-grown III-V compound materials

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 614-620

  Lee, Jeong Sik ^a   Sugou, Shigeo ^a   Masumoto, Yasuaki ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELLIPSOMETRY; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; NUCLEATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SURFACE ROUGHNESS; THICKNESS MEASUREMENT;

LAYER-BY-LAYER GROWTH;

SEMICONDUCTING FILMS;

EID: 0033887806     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00755-1     Document Type: Article

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