GaAs cap layer growth and In-segregation effects on self-assembled InAs-quantum dots monitored by optical techniques

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 530-539

  Steimetz, E ^a   Wehnert, T ^a   Haberland, K ^a   Zettler, J T ^a   Richter, W ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Ellipsometry; GaAs; In situ monitoring; InAs; Indium segregation; MOVPE; Quantum dot stacks; RAS; Self assembled quantum dots

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; INTERDIFFUSION (SOLIDS); METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

INDIUM ARSENIDE; QUANTUM DOT STACKS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032477153     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00650-2     Document Type: Article

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