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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 1, 2000, Pages 139-145

Quantum dot infrared photodetectors in new material systems

(10) Finkman, E a Maimon, S a Immer, V a Bahir, G a Schacham, S E b Gauthier Lafaye, O c Herriot, S c Julien, F H c Gendry, M d Brault, J d

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

b ARIEL UNIVERSITY (Israel)

c CNRS (France)

d ECOLE CENTRALE DE LYON (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRANSITIONS; LIGHT POLARIZATION; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

INDIUM ALUMINUM ARSENIDE; INDIUM ARSENIDE; INTRABAND TRANSITIONS; QUANTUM WELL INFRARED PHOTODETECTORS;

INFRARED DETECTORS;

EID: 2642526200 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/S1386-9477(99)00266-0 Document Type: Article

Times cited : (28)

References (8)

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