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Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 592-598

Optimizing the growth procedure for InAs quantum dot stacks by optical in situ techniques

(7) Steimetz, E a Wehnert, T a Kirmse, H b Poser, F a Zettler, J T a Neumann, W b Richter, W a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b HUMBOLDT UNIVERSITY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELLIPSOMETRY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

INDIUM ARSENIDE; REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS); SURFACE RECONSTRUCTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034512736 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00784-3 Document Type: Article

Times cited : (34)

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- E. Steimetz, T. Wehnert, J.T. Zettler, W. Richter, L. Wang, P. Kratzer, M. Scheffler, Q. Liu, H. Kirmse, W. Neumann, Phys. Rev. Lett., submitted for publication.
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