Calculations of the electronic structure of strained InAs quantum dots in InP

Journal of Applied Physics

Volumn 92, Issue 2, 2002, Pages 932-936

  Holm, Magnus ^a   Pistol, Mats Erik ^a   Pryor, Craig ^b  

^a LUND UNIVERSITY   (Sweden)

^b UNIVERSITY OF IOWA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIPOLE MATRIX ELEMENTS; ENVELOPE FUNCTION APPROXIMATIONS; EXCITON-BINDING ENERGY; INAS QUANTUM DOTS; INP; PIEZOELECTRIC POLARIZATIONS; SPURIOUS SOLUTIONS; STRAIN-DEPENDENT; THREE-DIMENSIONAL SHAPE; TRANSITION ENERGY;

BINDING ENERGY; INDIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

ELECTRONIC STRUCTURE;

EID: 0037100874     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486021     Document Type: Article

References (18)

1. For a review, see e.g., W. Seifert, N. Carlsson, M. Miller, M.-E. Pistol, L. Samuelson, and L. R. Wallenberg, Prog. Cryst. Growth Charact. Mater. 33, 423 (1996). pcg PCGMED 0960-8974
2. A. Ponchet, A. Le Corre, H. L'Haridon, B. Lambert, and S. Salan, Appl. Phys. Lett. 67, 1850 (1995). apl APPLAB 0003-6951
3. R. Leonelli, C. A. Tran, J. L. Brebner, J. T. Graham, R. Tabti, R. A. Masut, and S. Charbonneau, Phys. Rev. B 48, 11135 (1993). prb PRBMDO 0163-1829
4. J. A. Prieto, G. Armelles, J. Groenen, and R. Carles, Appl. Phys. Lett. 74, 99 (1999). apl APPLAB 0003-6951
5. N. Carlsson, T. Junno, L. Montelius, M.-E. Pistol, L. Samuelson, and W. Seifert, J. Cryst. Growth 191, 347 (1998). jcr JCRGAE 0022-0248
6. S. Yoon, Y. Moon, T. W. Lee, E. Yoon, and Y. D. Kim, Appl. Phys. Lett. 74, 2029 (1999). apl APPLAB 0003-6951
7. H. Pettersson, C. Pryor, L. Landin, M.-E. Pistol, N. Carlsson, W. Seifert, and L. Samuelson, Phys. Rev. B 61, 4795 (2000). prb PRBMDO 0163-1829
8. J. Brault, M. Gendry, G. Grenet, G. Hollinger, Y. Desieres, and T. Benyattou, J. Cryst. Growth 202, 1176 (1999). jcr JCRGAE 0022-0248
9. C. Pryor, Phys. Rev. B 57, 7190 (1998). prb PRBMDO 0163-1829
10. C. Pryor, Phys. Rev. B 60, 2869 (1999). prb PRBMDO 0163-1829
11. T. B. Bahder, Phys. Rev. B 41, 11992 (1990). prb PRBMDO 0163-1829
12. O. Stier, M. Grundmann, and D. Bimberg, Phys. Rev. B 59, 5688 (1999). prb PRBMDO 0163-1829
13. D. D. Nolte, W. Walukiewicz, and E. E. Haller, Phys. Rev. Lett. 59, 501 (1987). prl PRLTAO 0031-9007
14. S. Adachi, J. Appl. Phys. 53, 8775 (1982). jap JAPIAU 0021-8979
15. Semiconductors: Physics of Group IV Elements and III-V compounds, edited by O. Madelung, M. Schilz, and H. Weiss, Landolt-Börnstein Vol. 17a (Springer, New York, 1982).
16. See C. N. Yeh, L. E. McNeil, R. E. Nahory, and R. Bhat, Phys. Rev. B 52, 14682 (1995) and references therein. prb PRBMDO 0163-1829
17. J. J. Finley, M. Skaliz, M. Arzberger, A. Zrenner, G. Böhm, and G. Abstreiter, Appl. Phys. Lett. 73, 2618 (1998). apl APPLAB 0003-6951
18. H. Pettersson, R. J. Warburton, J. P. Kotthaus, N. Carlsson, W. Seifert, M.-E. Pistol, and L. Samuelson, Phys. Rev. B 60, 11289 (1999). prb PRBMDO 0163-1829