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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 9 A/B, 2001, Pages

Possibility of two-step As-desorption from (001) InP using surface photoabsorption

(6) Lee, Tae Wan a Seong, Ga Young b Kim, Young Dong b Hwang, Heedon a Yoon, Sukho a Yoon, Euijoon a

a Seoul National University (South Korea)

b Kyung Hee University (South Korea)

Author keywords

As desorption; InP; MOCVD; P desorption; Surface photoabsorption

Indexed keywords

CHEMICAL REACTORS; DESORPTION; ELECTRON ENERGY LEVELS; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTROSCOPIC ANALYSIS; SURFACE CLEANING; SURFACE PHENOMENA; THERMAL EFFECTS;

STABLE STATES; SURFACE CONTAMINANTS; SURFACE PHOTOABSORPTION; THERMAL CLEANING;

ARSENIC;

EID: 0035885673 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.l980 Document Type: Letter

Times cited : (3)

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