The dynamics of quantum dot formation in the InAs on GaAs(001) system: Growth rate effects

Applied Surface Science

Volumn 144-145, Issue , 1999, Pages 484-487

  Westwood, D I ^a   Sobiesierski, Z ^a   Matthai, C C ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

Epitaxy; Islands; Quantum dots; Reflectance anisotropy spectroscopy (RAS); Semiconductor

Indexed keywords

DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; REAL TIME SYSTEMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPY; WETTING;

GROWTH RATE EFFECTS; INDIUM ARSENIDE; REFLECTANCE ANISOTROPY SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032630881     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00845-9     Document Type: Article

References (9)

1. F. Houzay, C. Guille, J.M. Moison, P. Henoc, F. Barthe, J. Cryst. Growth 81 (1987) 67.
2. O. Brandt, K. Ploog, L. Tapfer, M. Hohenstein, R. Bierwolf, F. Phillipp, Phys. Rev. B 45 (1992) 8443.
3. J.-Y. Marzin, J.-M. Gérard, A. Izraël, D. Barrier, G. Bastard, Phys. Rev. Lett. 73 (1994) 716.
4. S.M. Scholz, A.B. Müller, W. Richter, D.R.T. Zahn, D.I. Westwood, D.A. Woolf, R.H. Williams, J. Vac. Sci. Technol. B 10 (1992) 1710.
5. D.I. Westwood, Z. Sobiesierski, E. Steimetz, J.-T. Zettler, W. Richter, Appl. Surf. Sci. 123-124 (1998) 347.
6. E. Steimetz, J.-T. Zettler, W. Richter, D.I. Westwood, D.A. Woolf, Z. Sobiesierski, J. Vac. Sci. Technol. B 14 (1996) 3058.
7. D.E. Aspnes, J.P. Harbison, A.A. Studna, L.T. Florez, M.K. Kelly, J. Vac. Sci. Technol. B 6 (1988) 1127.
8. J.M. Moison, F. Houzay, F. Barthe, L. Leprince, E. André, O. Vatel, Appl. Phys. Lett. 64 (1994) 196.
9. D.I. Westwood, Z. Sobiesierski, C.C. Matthai, E. Steimetz, J.-T. Zettler, W. Richter, J. Vac. Sci. Technol. B 16 (1998) 2358.