Electrical properties of gesi surface- and buriedchannel p-MOSFET's fabricated by Ge implantation

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 97-103

  Jiang, Hong ^a,b   Elliman, Robert G ^a,b  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HETEROJUNCTIONS; ION BEAMS; ION IMPLANTATION; MOSFET DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

CHANNEL HOLE MOBILITY; GERMANIUM IMPLANTATION; LINEAR TRANSCONDUCTANCE; SOLID PHASE EPITAXIAL GROWTH; STRAIN RELAXATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0029733931     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477598     Document Type: Article

References (25)

1. S.C. Jain and W. Hayes, "Structure, properties, and applications of Ge-4Sii-i strained layers and super-lattices," Semicond. Sci. Technoi, vol. 6, p. 547, 1991.
2. S. S.Iyer, "The growth and applications of Ge-4Sii-r alloys in Si-based technology," in Proc. 1991 Int. Conf. Solid State Devices and Materials, Japan, 1991, p. 156.
3. J.C. Bean, "Silicon-based semiconductor heterostructures: Column IV bandgap engineering," in Proc. IEEE, vol. 80, p. 571, 1992.
4. K.L. Wang and R. P. G. Kamnasiri, "SiGe/Si electronics and optoelectronics," J. Vac. Sci. Techno!., vol. B11, p. 1159, 1993.
5. T.P. Pearsall and J. C. Bean, "Modulation-doped Si/Ge-4Sii-j; field effect transistors grown by MBE," IEEE Electron Device Lett., vol. EDL-7, p. 308, 1986.
6. H. Daembkes, H.-J. Herzog, H. Jorke, H. Kibbel, and E. Kaspar, "The nchannel SiGi/Si modulation-doped field-effecl-transistor," IEEE Trans. Electron Devices, vol. ED-33, p. 633, 1986.
7. D.K. Nayak, J. C. S. Woo, J. S. Park, K. L. Wang, and K. P. Mac Williams, "Enhancement-mode quantum-well GejjSii-x PMOS," IEEE Electron Devices Lett., vol. 12, p. 154, 1991.
8. D.K. Nayak, J. C. S. Woo, G. K, Yabiku, K. P. MacWilliams, J. S. Park, and K. L. Wang, "High-mobility GeSi PMOS on SIMOX," IEEE Electron Devices Lett., vol. 14, p. 520, 1993.
9. S. Verdonckt-Vandebroek, E. F. Crabbe, B. S. Meyerson, D. L. Harame, P. J. Restle, J. M. C. Stork, A. C. Megdanis, C. L. Stanis. A. A. Bright, G. M. W. Kroesen, and A. C. Wareen, "High-mobility modulation-doped graded SiGe-channel p-MOSFET's," IEEE Electron. Devices Lett., vol. \'l, p. 447, 1991.
10. P.M. Garone, V. Venkataraman, and J. C. Sturm, "Hole mobility enhancement in MOS-gated Ge-4Sii -4/Si heterostructure inversion layers," IEEE Electron. Devices Lett., vol. 13, p. 56, 1992.
11. K. Goto, J. Murota, T. Maeda, R. Schutz, K. Aizawa, R. Kircher, K Yokoo, and S. Ono, "Fabrication of a SiGe-channel MOSFET containin high Ge fraction layer by low pressure chemical .vapor deposition," i Proc. 1992 Int. Conf. Solid State Devices and Materials, Japan, 1992 p. 449.
12. Q.Z. Hong, J. G. Zhu, J. W. Mayer, W. Xia, and S. S. Lau, "Solid phas epitaxy of stressed and stress-relaxed Ge-Si alloys," J. Appl Phys., vol 71, p. 1768, 1992.
13. R.G. Elliman and W. C. Wong, "The fabrication of epitaxial Ge-4Sii-a layers by ion implantation," Nucl. Instrum. Meth., vol. B80/81, p. 768 1993.
14. R.G. Elliman, W. C. Wong, and P. Kringhoj, "Solid-phase epitaxia crystallisation of Gex Sii ~x alloy layers," in Mat. Res. Soc. Symp. Proc. vol. 321, p. 375, 1994.
15. C.R. Selvakumar and B. Hecht, "SiGe-channel n-MOSFET by germanium implantation," IEEE Electron Devices Lett., vol. 12, p. 444 1991.
16. [16| F.K. LeGoues, R. Rosenberg, T. Nguyen, F. Himpsel, and B. S Meyerson, "Oxidation studies of SiGe." J. Appl. Phys., vol. 65, p. 1724 1989.
17. N.V. Nguyen, K. Vedam, and J. Narayan, "Characterization of the interface between GeH -implanted crystalline Si and its thermally grown oxide by spectroscopic ellipsomstry," J. Appl. Phys., vol. 67, p. 599 1990.
18. D. Nayak, K. Kamjoo, J. C. S. Woo, J. S. Park, and K. L. Wang, "Rapi thermal oxidation of GeSi strained layers," Appl. Phys. Lett., vol. 56 p. 66, 1990.
19. H.K. Liou, P. Mei, U. Genner, and E. S. Yang, "Effects of G concentration on SiGe oxidation behaviour," Appl. Phys. Lett., vol. 59 p. 1200, 1991.
20. S.M. Sze, Semiconductor Devices-Physics and Technologv. Ne York: Wiley, 1985, ch. 9.
21. S.K. Chun and K. L. Wang, "Effective mass and mobility of holes i strained Sii-xGex layers on (001) Sii_BGea substrate," IEEE Trans Electron Devices, vol. 39, p. 2153, 1992.
22. T. Manku, J. M. McGregor, A. Nathan, D. J. Roulston, J. P. Noel and D. C. Houghton, "Drift hole mobility in strained and unstraine doped Sii-xGer alloys," IEEE Trans. Electron Devices, vol. 40, p 1990, 1993.
23. A.R. Srivatsa, S. Sharan, O. W. Holland, and J. Narayan, "Natur of interfaces and oxidation processes in Ge+ -implanted Si," J. Appl Phys., vol. 65, p. 4028, 1989.
24. D.K. Nayak, K. Kamjoo, J. S. Park, J. C. S. Woo, and K. L. Wang, "Wet oxidation of GeSi strained layers by rapid thermal processing," Appl. Phys. Lett., vol. 57, p. 369, 1990.
25. S.S. lyer, P. M. Solomon, V. P. Kesan, A. A. Bright, J. L. Freeouf, T. N. Nguyen, and A. C. Warren, A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices," IEEE Electron Devices Lett., vol. 12, p. 246, 1991.