Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 9, 2002, Pages 1669-1671

  Hakim, M M A ^a   Haque, A ^a  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

Direct tunneling current; MOSFET modeling; Quantum effects; Wave function penetration

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; ELECTROSTATICS; ERRORS;

ELECTROSTATIC POTENTIAL; QUANTUM EFFECTS; RELATIVE ERROR; WAVE FUNCTION PENETRATION;

MOSFET DEVICES;

EID: 0036712407     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.802650     Document Type: Article

References (18)

1. Self consistent modeling of accumulation layers and tunneling currents through very thin oxides
2. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFETs
3. Modeling gate leakage current in nMOS structures due to tunneling through an ultra-thin oxide
4. Modeling study of ultrathin gate oxide using direct tunneling current and capacitance-voltage measurements in MOS devices
5. Modeling of direct tunneling current through gate dielectric stacks
6. Characterization of tunneling current in ultrathin gate oxide
7. Full quantum mechanical model for the charge distribution and the leakage currents in ultra thin metal-insulator-semiconductor capacitors
8. Semiclassical and wave-mechanical modeling of charge control and direct tunneling leakage in MOS and H-MOS devices with ultra-thin oxides
9. Modified airy function method for modeling of direct tunneling current in metal-oxide-semiconductor structures
10. Self-consistent results for n-type Si inversion layers
11. On the use of appropriate boundary conditions to calculate the normalized wave functions in the inversion layers of MOSFETs with ultra-thin gate oxides
12. Closed- and open-boundary models for gate-current calculation in n-MOSFETs
13. Effects of wave function penetration into the gate oxide on self-consistent modeling of scaled MOSEFTs
14. An efficient technique to calculate the normalized wave functions in arbitrary one-dimensional quantum well structures
15. 2 gate oxides from microscopic models
16. On tunneling in metal-oxide-silicon structures
17. High-K dielectrics: Currents status and materials properties considerations