SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 317-322

Growth of thick InN by molecular beam epitaxy

(7) Lu, Hai a Schaff, William J a Eastman, Lester F a Wu, J b Walukiewicz, Wladek b Look, David C c Molnar, Richard J d

a School of Operations Research and Industrial Engineering (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c WRIGHT STATE UNIVERSITY (United States)

d MIT LINCOLN LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL DEFECTS; ENERGY GAP; FILM GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTOR DOPING; SUBSTRATES; SURFACE ROUGHNESS; THICK FILMS;

FILM THICKNESS; HALL MOBILITY; INDIUM NITRIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0038372278 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-743-l4.10 Document Type: Conference Paper

Times cited : (20)

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