Temperature dependence and electrical properties of dominant low-frequency noise source in SiGe HBT

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 1107-1112

  Bruce, S ^a   Vandamme, L K J ^a   Rydberg, Anders ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

HBT; Low frequency noise; SiGe; Temperature dependence

Indexed keywords

EID: 0001144595     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841247     Document Type: Article

References (10)

1. H.A. W. Markus, Ph. Roche, and T. G. M. Kleinpenning, "On thé l/f noise in polysilicon emitter bipolar transistors: Coherence between base current noise and emitter series resistance noise," Solid-State Electron., vol. 41, no. 3, pp. 441-445, 1997.
2. A.K. Kirtania et al, "Measurement and comparison of I// noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 43, pp. 784-792, May 1996.
3. M.J. Deen et al., "Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors," J. Appl. Phys..
4. L. Vempati et al, "Low-frequency noise characteristics of UHV/CVD epitaxial Si- and SiGe-base bipolar transistors," IEEE J. Solid-State Circuits, vol. 31, pp. 1458-1467, Oct. 1996.
5. R. Gabi et al., "Low-frequency noise characteristics of advanced Si and SiGe bipolar transistors," in Proc. ESSDERC'97, Sept. 1997, pp. 536-539.
6. S. Bruce, L.K. J. Vandamme, and A. Rydberg, "Measurement of lowfrequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers," IEEE Trans. Electron Devices, pp. 993-1000, May 1999.
7. A. Schuppen et al., "SiGe-technology and components for mobile communication systems," in Proc. 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting, 1996, pp. 130-133.
8. S. Bruce et al, "Design and realization of a millimeter-wave Si/SiGe HBT frequency multiplier," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 695-700, May 1998.
9. H.C. Casey, Jr., Devices for Integrated Circuits (Silicon and III-V Compound Semiconductors). New York: Wiley, 1999, pp. 433-4145.
10. L.K.J. Vandamme, S. Kibeya, S. Orsal, and R. Alabedra, "I// noise and thermal noise of GaAs/Alo-4Gao.eAs superlattice," in Proc. Conf. Noise in Physical Systems and l/f Fluctuations, vol. 285, 1993, pp. 324-328.