Low-frequency noise of InP/InGaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices

Volumn 45, Issue 12, 1998, Pages 2400-2406

  Takanashi, Yoshifumi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

LOW FREQUENCY NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032307758     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.735715     Document Type: Article

References (28)

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