The influence of BF 2 and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2808-2815

  Lukyanchikova, Nataliya ^a,b   Garbar, Nikolay ^b   Petrichuk, Michail ^b   Schiz, Jochen F W ^c   Ashburn, Peter ^a,c  

^a IEEE   (United Kingdom)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

1 f noise; Heterojunction bipolar transistors (HBTs); SiGe; Stress

Indexed keywords

BASE CURRENT NOISE;

ANNEALING; EPITAXIAL GROWTH; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; VISCOUS FLOW;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035694757     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974708     Document Type: Article

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