Study of Excess Silicon at Si3N4/Thermal SiO2 Interface Using EELS and Ellipsometric Measurements

Journal of the Electrochemical Society

Volumn 146, Issue 2, 1999, Pages 780-785

  Gritsenko, V A ^a   Svitasheva, S N ^a   Petrenko, I P ^a   Wong, Hei ^b   Xu, J B ^c   Wilson, I H ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELLIPSOMETRY; IONIZING RADIATION; OXIDATION; SILICA; SILICON NITRIDE; SYNTHESIS (CHEMICAL);

HOLE INJECTION; POSITIVE CHARGE ACCUMULATION;

HETEROJUNCTIONS;

EID: 0033075804     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391681     Document Type: Article

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