Highly uniform InAlAs-InGaAs HEMT technology for high-speed optical communication system ICs

IEEE Transactions on Semiconductor Manufacturing

Volumn 16, Issue 3, 2003, Pages 370-375

  Hara, Naoki ^a   Makiyama, Kozo ^a   Takahashi, Tsuyoshi ^a   Sawada, Ken ^a   Arai, Tomoyuki ^a   Ohki, Toshihiro ^a   Nihei, Mizuhisa ^a   Suzuki, Toshihide ^a   Nakasha, Yasuhiro ^a   Nishi, Masahiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

High speed IC; InAlAs InGaAs HEMT; InP based HEMT; Optical communication IC; Uniformity; Y shaped gate

Indexed keywords

ETCHING; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED OPTOELECTRONICS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THRESHOLD VOLTAGE;

HIGH-SPEED OPTICAL COMMUNICATION SYSTEM; UNIFORMITY; Y-SHAPED GATE;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0042386785     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2003.815629     Document Type: Article

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