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Volumn 16, Issue 3, 2003, Pages 370-375

Highly uniform InAlAs-InGaAs HEMT technology for high-speed optical communication system ICs

Author keywords

High speed IC; InAlAs InGaAs HEMT; InP based HEMT; Optical communication IC; Uniformity; Y shaped gate

Indexed keywords

ETCHING; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED OPTOELECTRONICS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THRESHOLD VOLTAGE;

EID: 0042386785     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2003.815629     Document Type: Article
Times cited : (40)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.