Stable and uniform InAlAs/InGaAs HEMT ICs for 40-Gbit/s optical communication systems

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 614-617

  Takahashi, T ^a   Nihei, M ^a   Makiyama, K ^a   Nishi, M ^a   Suzuki, T ^a   Hara, N ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFERENTIAL AMPLIFIERS; INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TIME DIVISION MULTIPLEXING; WAVELENGTH DIVISION MULTIPLEXING;

OFFSET-VOLTAGES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034843460     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. An-80 Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
2. Thermal stability of AlInAs/GaInAs/-InP heterostructures
3. Reliability study of parasitic source and drain resistances of InP-based HEMTs
4. 30-nm-gate InP-based latticematched high electron mobility transistors with 350 GHz cutoff frequency
5. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
6. +-InP HFET with an InP etchstop layer
7. Ultrahigh-speed integrated circuits using InP-based HEMTs
8. 49GHz preamplifier with a transimpedance gain of 52 dB Ω using InP HEMTs
9. 40-Gbit/s Dtype flip-flop and multiplexer circuits using InP HEMT