Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film

Journal of Applied Physics

Volumn 90, Issue 7, 2001, Pages 3551-3557

  Uchida, Ken ^a   Koga, Junji ^a   Ohba, Ryuji ^a   Takagi, Shin Ichi ^a   Toriumi, Akira ^a,b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035476340     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1392959     Document Type: Article

References (19)

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