Coulomb blockade effects in edge quantum wire SOI MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1686-1689

  Ohata, Akiko ^a   Toriumi, Akira ^a   Uchida, Ken ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Coulomb blockade; MOSFETs; Quantum wire; Silicon; Single electron tunneling; SOI

Indexed keywords

EID: 0000938894     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1686     Document Type: Article

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